Preparation of Thin Dielectric Films by Plasma-Assisted Chemical Vapor Deposition of Hexamethyldisilazane.

Plasma-enhanced Chemical Vapor Deposition of silicon dioxide Optimizing dielectric films through plasma characterization

Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition

Bismuth titanate (Bi,Ti,O,, :BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi20, was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H70)4] as a CVD source. The composition of films was controlled by changing RF power (P,,) of Bi,O, target and Ti source...

Characterization of boron carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes

Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition

Pulsed DC- Plasma Assisted Chemical Vapor Deposition of α-rich Nanostructured Tantalum Film: Synthesis and Characterization

This paper is an attempt to synthesize nanostructured tantalum films on medical grade AISI 316L stainless steel (SS) using pulsed DC plasma assisted chemical vapor deposition (PACVD). The impact of duty cycle (17-33%) and total pressure (3-10 torr) were studied using field emission scanning electron microscopy (FESEM), grazing incidence x-ray diffraction (GIXRD), nuclear reaction analysis (NRA)...